✔ Tunnel Diode Material

Tunnel Diode Material

- July 22, 2019

A tunnel diode also known as a esaki diode is a type of semiconductor diode that has effectively negative resistance due to the quantum mechanical effect called tunneling. The germanium material is basically used to make tunnel diodes.

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Tunnel diode works based on tunnel effect.

Tunnel diode material. Leo esaki invented the tunnel diode in august 1957. It was invented in august 1957 by leo esaki yuriko kurose and takashi suzuki when they were working at tokyo tsushin kogyo now known as sony. With an area of negative resistance between the peak voltage vpe and the valley voltage vv.

Tunnel diodes have a heavily doped pn junction that is about 10 nm wide. Because of this overlapping the conduction band electrons at n side and valence band holes at p side are nearly at the same energy level. That means when the voltage is increased the current through it decreases.

Esaki diodes was named after leo esaki who in 1973 received the nobel prize in physics for discovering the electron tunneling effect used in these diodes. Tunnel diodes esaki diode tunnel diode is the p n junction device that exhibits negative resistance. The tunnelling is the phenomenon of conduction in the semiconductor material in which the charge carrier punches the barrier instead of climbing through it.

The tunnel diode is a highly conductive heavily doped pn junction diode in which the current induces because of the tunnelling. This has a form of n shaped curve. The diagram towards the top of the page shows the tunnel diode iv characteristic.

In tunnel diode the conduction band of the n type material overlaps with the valence band of the p type material because of the heavy doping. The following image shows the symbol of a tunnel diode. In the tunnel diode the semiconductor materials used in forming a junction are doped to the extent of one thousand impurity atoms for ten million semiconductor atoms.

Such diodes are usually fabricated from germanium gallium arsenide gaas and gallium antimonide gasb. The materials used for this diode are germanium gallium arsenide and other silicon materials. This heavy doping produces an extremely narrow depletion zone similar to that in the zener diode.

They can also be made from gallium arsenide and silicon materials. Therefore it is also called as esaki diode. It is called a tunnel diode because due to its extremely thin depletion layer electrons are able to tunnel through the potential barrier at relatively low forward bias voltage less than 005 v.

Leo esaki invented tunnel diode in august 1957. A tunnel diode is also known as eskari diode and it is a highly doped semiconductor that is capable of very fast operation. A tunnel diode or esaki diode is a type of semiconductor diode that has effectively negative resistance due to the quantum mechanical effect called tunneling.

The values for these voltages depend upon the diode material and also upon its individual characteristics.