✔ Silicon Carbide Schottky Diode

Silicon Carbide Schottky Diode

- June 06, 2019

Infineons broad portfolio of silicon carbide sic coolsic schottky diodes sic mosfets and sic hybrid modules from 600v to 1200v combine revolutionary technology and best in class packaging with manufacturing excellence outperforming si devices in semiconductor solutions by far. Efficiency and reliability are paramount for them and this latest design with the support of unitedsic products excels in both respects.

C3d06060a Silicon Carbide Schottky Diode Z Rec 600v Series Single 600 V 19 A 16 Nc To 220

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The evolution of this power supply has created ever greater benefits for our customers particularly with respect to energy savings.

Silicon carbide schottky diode. Schottky silicon carbide diodes schottky diodes rectifiers are available at mouser electronics. Their low reverse recovery characteristics make sts silicon carbide diodes a key contributor to energy savings in smps applications and in emerging domains such as solar energy conversion ev or hev charging stations. Nowadays schottky diode mosfet and jfet are the most popular sic power devices in the market especially the sic schottky diode which already has almost 20 years of mature application experience.

Rohm semiconductor sic schottky barrier diodes 1. Mouser offers inventory pricing datasheets for schottky silicon carbide diodes schottky diodes rectifiers. Compared to standard silicon bipolar diodes sic schottky diodes have negligible reverse recovery which reduces switching losses and enables dramatic increases in system efficiency.

Silicon carbide sic is widely used in the mediumhigh voltage power semiconductor device manufacturing due to its inherent material properties of the wide bandgap and high thermal conductivity. Silicon carbide schottky diodes. Silicon carbide schottky barrier diode 600 v 15 v 15 ns 1 at 250c.

Voltage current regulation diodes small signal diodes and diode arrays igbt power mosfet power modules jfet bjt bipolar junction transistor legacy power discretes modules diode and rectifier devices silicon carbide sic semiconductor sic modules sic schottky barrier diodes. Silicon carbide sic schottky diodes use a completely new technology that provides superior switching performance and higher reliability compared to silicon. Si based diodes have a wide increase at higher temperatures and are typically limited to 1500c operation.

No reverse recovery current temperature independent switching characteristics and excellent thermal performance sets silicon carbide as the next generation of power semiconductor. Schottky diodes constructed from silicon carbide have a much lower reverse leakage current than silicon schottky diodes as well as higher forward voltage about 14 18v at 25 0c and reverse voltage. Sts silicon carbide diodes take advantage of sics superior physical characteristics over si with 4 times better dynamic characteristics and 15 less forward voltage vf.

Silicon carbide schottky diode. Comparison of key parameters for silicon and sic diodes.